SI5935 Series

Catalog

MOSFET 2P-CH 20V 3A 1206-8

Part	Power - Max [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5935DC-T1-E3	1.1 W	Surface Mount	20 V	-55 °C	150 °C	Logic Level Gate	1206-8 ChipFET™	1 V	8.5 nC	2 P-Channel	3 A	MOSFET (Metal Oxide)	86 mOhm
Vishay General Semiconductor - Diodes Division SI5935CDC-T1-GE3	3.1 W	Surface Mount	20 V	-55 °C	150 °C		1206-8 ChipFET™	1 V	11 nC	2 P-Channel	4 A	MOSFET (Metal Oxide)		100 mOhm	455 pF