CSD23280F3T
Active-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 116 MOHM, GATE ESD PROTECTION
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CSD23280F3T
Active-12-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.6 MM X 0.7 MM, 116 MOHM, GATE ESD PROTECTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD23280F3T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.8 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 1.23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 234 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs [Max] | 116 mOhm |
| Supplier Device Package | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.91 | |
| 10 | $ 0.79 | |||
| 100 | $ 0.55 | |||
| Digi-Reel® | 1 | $ 0.91 | ||
| 10 | $ 0.79 | |||
| 100 | $ 0.55 | |||
| Tape & Reel (TR) | 250 | $ 0.37 | ||
| 500 | $ 0.32 | |||
| 1250 | $ 0.30 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.74 | |
| 100 | $ 0.48 | |||
| 250 | $ 0.36 | |||
| 1000 | $ 0.24 | |||
Description
General part information
CSD23280F3 Series
This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Documents
Technical documentation and resources