Discrete Semiconductor Products
STGB30M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS
Discrete Semiconductor Products
STGB30M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 30 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGB30M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 80 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power - Max [Max] | 258 W |
| Reverse Recovery Time (trr) | 140 ns |
| Supplier Device Package | TO-263 (D2PAK) |
| Switching Energy | 300 µJ, 960 µJ |
| Td (on/off) @ 25°C [custom] | 115 ns |
| Td (on/off) @ 25°C [custom] | 31.6 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGB30M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.