Specification	FCH150N65F-F155

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3737 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	298 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

FCH150N65F-F155 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type
ON Semiconductor FCH150N65F-F155	298 W	650 V	-55 °C	150 °C	10 V	Through Hole	MOSFET (Metal Oxide)	5 V	24 A	TO-247-3	3737 pF	TO-247-3	94 nC	20 V	150 mOhm	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.88
		30	$ 4.57
		120	$ 3.84
		510	$ 3.34
Newark	Each	1	$ 8.57
		10	$ 7.50
		25	$ 6.26
		50	$ 5.95
		100	$ 5.64
		250	$ 5.64
		900	$ 5.63
ON Semiconductor	N/A	1	$ 3.04

Description

General part information

FCH150N65F-F155 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet

Package Drawing-340CH-TO-247-3LD

Package Drawing