FCH150N65F-F155 Series

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247

Part	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type
ON Semiconductor FCH150N65F-F155	298 W	650 V	-55 °C	150 °C	10 V	Through Hole	MOSFET (Metal Oxide)	5 V	24 A	TO-247-3	3737 pF	TO-247-3	94 nC	20 V	150 mOhm	N-Channel

Catalog

Power MOSFET, N-Channel, SUPERFET® II, FRFET®, 650 V, 24 A, 150 mΩ, TO-247

Key Features

• 700 V @ TJ= 150°C

• Typ. RDS(on)= 133 mΩ

• Ultra Low Gate Charge (Typ. Qg= 72 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.)= 458 pF)

• 100% Avalanche Tested

• RoHS Compliant

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET®MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.