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TO-263AB
Discrete Semiconductor Products

IRL520S

Obsolete

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DocumentsDatasheet
TO-263AB
Discrete Semiconductor Products

IRL520S

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRL520S
Current - Continuous Drain (Id) @ 25°C9.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V, 4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.7 W, 60 W
Rds On (Max) @ Id, Vgs270 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRL520 Series

N-Channel 100 V 9.2A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources