IRL520 Series

Catalog

MOSFET N-CH 100V 9.2A D2PAK

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRL520S	10 V	100 V	12 nC	4 V 5 V	MOSFET (Metal Oxide)	2 V	9.2 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	3.7 W 60 W	TO-263 (D2PAK)	N-Channel	270 mOhm
Vishay General Semiconductor - Diodes Division IRL520PBF-BE3	10 V	100 V	12 nC		MOSFET (Metal Oxide)	2 V	9.2 A	Through Hole	TO-220-3	-55 °C	175 ░C	60 W	TO-220AB	N-Channel	270 mOhm
Vishay General Semiconductor - Diodes Division IRL520STRL	10 V	100 V	12 nC	4 V 5 V	MOSFET (Metal Oxide)	2 V	9.2 A	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	175 ░C	3.7 W 60 W	TO-263 (D2PAK)	N-Channel	270 mOhm
Vishay General Semiconductor - Diodes Division IRL520PBF	10 V	100 V	12 nC	4 V 5 V	MOSFET (Metal Oxide)	2 V	9.2 A	Through Hole	TO-220-3	-55 °C	175 ░C	60 W	TO-220AB	N-Channel	270 mOhm