Specification	FQU2N90TU-WS

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	50 W, 2.5 W
Rds On (Max) @ Id, Vgs	7.2 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQU2N90TU-AM002 Series

Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FQU2N90TU-WS	7.2 Ohm	5 V	500 pF	2.5 W 50 W	-55 °C	150 °C	Through Hole	900 V	N-Channel	IPAK	MOSFET (Metal Oxide)	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	1.7 A
ON Semiconductor FQU2N90TU-AM002	7.2 Ohm	5 V	500 pF	2.5 W 50 W	-55 °C	150 °C	Through Hole	900 V	N-Channel	IPAK	MOSFET (Metal Oxide)	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	1.7 A
ON Semiconductor FQU2N90TU-AM002	7.2 Ohm	5 V	500 pF	2.5 W 50 W	-55 °C	150 °C	Through Hole	900 V	N-Channel	IPAK	MOSFET (Metal Oxide)	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	1.7 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQU2N90TU-AM002 Series

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.