FQU2N90TU-AM002 Series

Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK

Catalog

Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FQU2N90TU-WS	7.2 Ohm	5 V	500 pF	2.5 W 50 W	-55 °C	150 °C	Through Hole	900 V	N-Channel	IPAK	MOSFET (Metal Oxide)	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	1.7 A
ON Semiconductor FQU2N90TU-AM002	7.2 Ohm	5 V	500 pF	2.5 W 50 W	-55 °C	150 °C	Through Hole	900 V	N-Channel	IPAK	MOSFET (Metal Oxide)	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	1.7 A
ON Semiconductor FQU2N90TU-AM002	7.2 Ohm	5 V	500 pF	2.5 W 50 W	-55 °C	150 °C	Through Hole	900 V	N-Channel	IPAK	MOSFET (Metal Oxide)	10 V	30 V	IPAK TO-251-3 Short Leads TO-251AA	1.7 A

Catalog

Power MOSFET, N-Channel, QFET®, 900 V, 1.7 A, 7.2 Ω, IPAK

Key Features

• 1.7A, 900V, RDS(on)= 7.2Ω(Max.) @VGS= 10 V, ID= 0.85A

• Low gate charge ( Typ. 12nC)

• Low Crss( Typ. 5.5pF)

• 100% avalanche tested

• RoHS compliant

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.