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Discrete Semiconductor Products
RF5L08600CB4
ObsoleteSTMicroelectronics
650 W, 50 V, 0.4 TO 1 GHZ RF POWER LDMOS TRANSISTOR
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Search across all available documentation for this part.
Discrete Semiconductor Products
RF5L08600CB4
ObsoleteSTMicroelectronics
650 W, 50 V, 0.4 TO 1 GHZ RF POWER LDMOS TRANSISTOR
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RF5L08600CB4 |
|---|---|
| Current - Test | 110 mA |
| Current Rating (Amps) | 1 µA |
| Frequency [Max] | 1 GHz |
| Frequency [Min] | 400 MHz |
| Gain | 19.5 dB |
| Mounting Type | Chassis Mount |
| Package / Case | D4E |
| Power - Output | 650 W |
| Supplier Device Package | D4E |
| Voltage - Rated | 115 V |
| Voltage - Test | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RF5L08600 Series
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.
Documents
Technical documentation and resources