AFGHL75T65SQDC
ActiveTRANS IGBT CHIP N-CH 650V 80A 375W 3-PIN(3+TAB) TO-247 RAIL AUTOMOTIVE AEC-Q101
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AFGHL75T65SQDC
ActiveTRANS IGBT CHIP N-CH 650V 80A 375W 3-PIN(3+TAB) TO-247 RAIL AUTOMOTIVE AEC-Q101
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Technical Specifications
Parameters and characteristics for this part
| Specification | AFGHL75T65SQDC |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 139 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 375 W |
| Qualification | AEC-Q101 |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 1.68 mJ, 1.11 mJ |
| Td (on/off) @ 25°C | 24 ns |
| Td (on/off) @ 25°C | 107.2 ns |
| Test Condition | 4.7 Ohm, 400 V, 15 V, 75 A |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 7.34 | |
| 30 | $ 5.86 | |||
| 120 | $ 5.43 | |||
| Newark | Each | 1 | $ 10.42 | |
| 10 | $ 9.97 | |||
| 25 | $ 9.60 | |||
| 50 | $ 9.32 | |||
| ON Semiconductor | N/A | 1 | $ 5.79 | |
Description
General part information
AFGHL75T65SQDC Series
Using the novel field stop 4th generation IGBT technology and the1.5th generation SiC Schottky Diode technology, AFGHL75T65SQDCoffers the optimum performance with both low conduction andswitching losses for high efficiency operations in various applications,especially totem pole bridgeless PFC and Inverter
Documents
Technical documentation and resources
