Specification	CSD17505Q5A

Current - Continuous Drain (Id) @ 25°C	100 A, 24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC
Input Capacitance (Ciss) (Max) @ Vds	1980 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.2 W
Rds On (Max) @ Id, Vgs [Max]	3.5 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

CSD17505Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Technology	FET Type
Texas Instruments CSD17505Q5A	8-VSONP (5x6)	4.5 V 10 V	1.8 V	-55 °C	150 °C	30 V	3.5 mOhm	1980 pF	Surface Mount	13 nC	3.2 W	24 A 100 A	8-PowerTDFN	20 V	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

Technical documentation and resources