CSD17505Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Technology	FET Type
Texas Instruments CSD17505Q5A	8-VSONP (5x6)	4.5 V 10 V	1.8 V	-55 °C	150 °C	30 V	3.5 mOhm	1980 pF	Surface Mount	13 nC	3.2 W	24 A 100 A	8-PowerTDFN	20 V	MOSFET (Metal Oxide)	N-Channel

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.5 mOhm

Key Features

• Ultralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck in Networking, Telecom, and Computing SystemsOptimized for Control and Synchronous FET ApplicationsUltralow Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5-mm × 6-mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck in Networking, Telecom, and Computing SystemsOptimized for Control and Synchronous FET Applications

Description

The NexFET power MOSFET has been designed to minimize losses in power conversion applications. The NexFET power MOSFET has been designed to minimize losses in power conversion applications.