Specification	CSD17573Q5B

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	64 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	9000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	195 W, 3.2 W
Rds On (Max) @ Id, Vgs	1 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

CSD17573Q5B Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.45 mOhm

Part	Technology	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package
Texas Instruments CSD17573Q5B	MOSFET (Metal Oxide)	1.8 V	Surface Mount	9000 pF	4.5 V 10 V	1 mOhm	3.2 W 195 W	-55 °C	150 °C	100 A	20 V	8-PowerTDFN	N-Channel	30 V	64 nC	8-VSON-CLIP (5x6)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 0.84-mΩ, 30-V, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources