Zenode.ai Logo
Beta
Microchip Technology-SST38VF6401-90-5I-B3KE Flash NOR Flash Parallel 3.3V 64M-bit 4M x 16 90ns 48-Pin TFBGA Tray
Integrated Circuits (ICs)

SST38VF6401-90-5I-B3KE

Active
Microchip Technology

2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ 48 TFBGA 6X8X1.2MM TRAY ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

Microchip Technology-SST38VF6401-90-5I-B3KE Flash NOR Flash Parallel 3.3V 64M-bit 4M x 16 90ns 48-Pin TFBGA Tray
Integrated Circuits (ICs)

SST38VF6401-90-5I-B3KE

Active
Microchip Technology

2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ 48 TFBGA 6X8X1.2MM TRAY ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSST38VF6401-90-5I-B3KE
Access Time90 ns
Memory FormatFLASH
Memory InterfaceParallel
Memory Organization4M x 16
Memory Size64 Gbit
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case48-TFBGA
Supplier Device Package48-TFBGA (6x8)
TechnologyFLASH
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]2.7 V
Write Cycle Time - Word, Page10 µs

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 6.04
25$ 5.91
DigikeyTray 1$ 7.26
25$ 6.99
100$ 6.71
Microchip DirectTRAY 1$ 7.26
25$ 6.99
100$ 6.71
1000$ 6.35
5000$ 6.00
NewarkEach 100$ 6.92

Description

General part information

SST38VF6401B Series

The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to

JEDEC standard pin assignments for x16 memories.

Please see documents section for the Silicon Errata for this device.