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Three Tower
Discrete Semiconductor Products

MBRT60035L

Obsolete
GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 300A 3TOWER

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Three Tower
Discrete Semiconductor Products

MBRT60035L

Obsolete
GeneSiC Semiconductor

DIODE MOD SCHOTT 35V 300A 3TOWER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMBRT60035L
Current - Average Rectified (Io) (per Diode)300 A
Current - Reverse Leakage @ Vr3 mA
Diode Configuration1 Pair Common Cathode
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseThree Tower
Speed500 ns, 200 mA
Supplier Device PackageThree Tower
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]35 V
Voltage - Forward (Vf) (Max) @ If [Max]600 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 68.00
20$ 74.38

Description

General part information

MBRT600 Series

Diode Array 1 Pair Common Cathode 35 V 300A Chassis Mount Three Tower

Documents

Technical documentation and resources

No documents available