MBRT600 Series
Manufacturer: GeneSiC Semiconductor
DIODE SCHOTTKY 40V 600A 3-PIN THREE TOWER
| Part | Package / Case | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage @ Vr | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] | Technology | Diode Configuration | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Three Tower | 40 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 750 mV | Schottky | 1 Pair Common Anode | |
GeneSiC Semiconductor | Three Tower | 45 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 750 mV | Schottky | 1 Pair Common Cathode | |
GeneSiC Semiconductor | Three Tower | 40 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 750 mV | Schottky | 1 Pair Common Cathode | |
GeneSiC Semiconductor | Three Tower | 30 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 750 mV | Schottky | 1 Pair Common Cathode | |
GeneSiC Semiconductor | Three Tower | 100 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 880 mV | Schottky | 1 Pair Common Anode | |
GeneSiC Semiconductor | Three Tower | 35 V | 200 mA 500 ns | 300 A | 3 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 600 mV | Schottky | 1 Pair Common Cathode | |
GeneSiC Semiconductor | Three Tower | 80 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 880 mV | Schottky | 1 Pair Common Anode | |
GeneSiC Semiconductor | Three Tower | 20 V | 200 mA 500 ns | 300 A | 3 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | Schottky | 1 Pair Common Cathode | 580 mV | |
GeneSiC Semiconductor | Three Tower | 35 V | 200 mA 500 ns | 300 A | 1 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 750 mV | Schottky | 1 Pair Common Anode | |
GeneSiC Semiconductor | Three Tower | 45 V | 200 mA 500 ns | 300 A | 5 mA | Three Tower | -55 °C | 150 °C | Chassis Mount | 600 mV | Schottky | 1 Pair Common Anode |