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ONSEMI FDMC8462
Discrete Semiconductor Products

FDMC8462

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 20 A, 0.0058 OHM, POWER 33, SURFACE MOUNT

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ONSEMI FDMC8462
Discrete Semiconductor Products

FDMC8462

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 40 V, 20 A, 0.0058 OHM, POWER 33, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC8462
Current - Continuous Drain (Id) @ 25°C20 A, 14 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs43 nC
Input Capacitance (Ciss) (Max) @ Vds2660 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)41 W, 2 W
Rds On (Max) @ Id, Vgs5.8 mOhm
Supplier Device PackagePower33
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.06
10$ 1.99
100$ 1.38
500$ 1.12
1000$ 1.03
Digi-Reel® 1$ 3.06
10$ 1.99
100$ 1.38
500$ 1.12
1000$ 1.03
Tape & Reel (TR) 3000$ 0.97
NewarkEach (Supplied on Cut Tape) 1$ 2.63
10$ 1.72
25$ 1.58
50$ 1.45
ON SemiconductorN/A 1$ 0.40

Description

General part information

FDMC8462 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.