Discrete Semiconductor Products

BSH108,215

NRND

MOSFET N-CH 30V 1.9A TO236AB

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 1.9A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSH108,215

Current - Continuous Drain (Id) @ 25°C	1.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	830 mW
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-236AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology
Freescale Semiconductor - NXP BSH108,215	TO-236AB	830 mW	1.9 A	190 pF	2 V	10 V	5 V	SC-59 SOT-23-3 TO-236-3	10 nC	150 °C	-65 °C	20 V	N-Channel	30 V	Surface Mount	120 mOhm	MOSFET (Metal Oxide)

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General part information

N-Channel 30 V 1.9A (Tc) 830mW (Tc) Surface Mount TO-236AB

Technical documentation and resources