BSH108 Series

Catalog

MOSFET N-CH 30V 1.9A TO236AB

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Technology
Freescale Semiconductor - NXP BSH108,215	TO-236AB	830 mW	1.9 A	190 pF	2 V	10 V	5 V	SC-59 SOT-23-3 TO-236-3	10 nC	150 °C	-65 °C	20 V	N-Channel	30 V	Surface Mount	120 mOhm	MOSFET (Metal Oxide)