Specification	NTHL080N120SC1

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	1670 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	348 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-15 V
Vgs(th) (Max) @ Id	4.3 V

NTHL080N120SC1A Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L

Part	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification
ON Semiconductor NTHL080N120SC1	4.3 V	Through Hole	-55 °C	150 °C	TO-247-3	1200 V	TO-247-3	1670 pF	110 mOhm	-15 V	25 V	44 A	348 W	N-Channel	56 nC
ON Semiconductor NTHL080N120SC1A	4.3 V	Through Hole	-55 °C	175 ░C	TO-247-3	1200 V	TO-247-3	1670 pF	110 mOhm	-15 V	25 V	31 A	178 W	N-Channel	56 nC	Automotive	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTHL080N120SC1A Series

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.