NTHL080N120SC1A Series

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L

Part	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max) [Min]	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Grade	Qualification
ON Semiconductor NTHL080N120SC1	4.3 V	Through Hole	-55 °C	150 °C	TO-247-3	1200 V	TO-247-3	1670 pF	110 mOhm	-15 V	25 V	44 A	348 W	N-Channel	56 nC
ON Semiconductor NTHL080N120SC1A	4.3 V	Through Hole	-55 °C	175 ░C	TO-247-3	1200 V	TO-247-3	1670 pF	110 mOhm	-15 V	25 V	31 A	178 W	N-Channel	56 nC	Automotive	AEC-Q101

Catalog

Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L

Key Features

• 1200V rated

• Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A

• High Speed Switching and Low Capacitance

• 100% UIL Tested

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.