Discrete Semiconductor Products
STB32N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.095 OHM, 24 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE
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Discrete Semiconductor Products
STB32N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.095 OHM, 24 A MDMESH M5 POWER MOSFET IN D2PAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STB32N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3320 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs [Max] | 119 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB32N65M5 Series
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources