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Technical Specifications
Parameters and characteristics for this part
| Specification | STG3820BJR |
|---|---|
| -3db Bandwidth | 800 MHz |
| Channel Capacitance (CS(off), CD(off)) [custom] | 2 pF |
| Channel Capacitance (CS(off), CD(off)) [custom] | 2 pF |
| Channel-to-Channel Matching (ΔRon) | 300 mOhm |
| Charge Injection | 6.4 pC |
| Crosstalk | -78 dB |
| Current - Leakage (IS(off)) (Max) | 20 nA |
| Mounting Type | Surface Mount |
| Multiplexer/Demultiplexer Circuit | 2:2 |
| Number of Circuits | 4 |
| On-State Resistance (Max) [Max] | 5.8 Ohm |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Package / Case | FCBGA, 30-WFBGA |
| Supplier Device Package | FlipChip 30 |
| Switch Circuit | DPDT |
| Switch Time (Ton, Toff) (Max) [custom] | 13 ns |
| Switch Time (Ton, Toff) (Max) [custom] | 15 ns |
| Voltage - Supply, Single (V+) [Max] | 4.3 V |
| Voltage - Supply, Single (V+) [Min] | 1.65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4490 | $ 1.73 | |
Description
General part information
STG3820 Series
The STG3820 device is a high-speed CMOS low voltage quad analog DPDT (dual pole dual throw) switch or 2:1 multiplexer/demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65 V to 4.3 V, making this device ideal for portable applications.
The SELm-n input is provided to control the switches. The switches nS1 and mS1 are ON (connected to common ports Dn and Dm respectively) when the SELm-n input is held high and OFF (high impedance state exists between the two ports) when the SELm-n is held low. The switches nS2 and mS2 are ON (connected to common port Dn and Dm respectively) when the SELm-n input is held low and OFF (high impedance state exists between the two ports) when the SELm-n is held high.
The STG3820 device has an integrated fail safe function to withstand overvoltage condition when the device is powered off. Additional key features are fast switching speed, break-before-make-delay time and ultralow power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient excess voltage.
Documents
Technical documentation and resources