Discrete Semiconductor Products

GCMX080B120S1-E1

Active

SIC 1200V 80M MOSFET SOT-227

Discrete Semiconductor Products

Active

SIC 1200V 80M MOSFET SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX080B120S1-E1

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20 V
FET Type	N-Channel
Gate Charge (Max)	58 nC
Input Capacitance (Ciss) (Max)	1336 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227
Power Dissipation (Max)	142 W
Rds On (Max)	100 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-10 V
Vgs (Max) Positive	25 V
Vgs(th) (Max)	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Package / Case	Mounting Type	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package Name	Power Dissipation (Max)
SemiQ GCMX080B120S1-E1	20 V	100 mOhm	miniBLOC SOT-227-4	Chassis Mount	4 V	1336 pF	-10 V	25 V	SiCFET (Silicon Carbide)	30 A	1200 V	N-Channel	-55 °C	175 °C	58 nC	SOT-227	142 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227

Technical documentation and resources