Discrete Semiconductor Products

GCMX080B120S1-E1

Active

SIC 1200V 80M MOSFET SOT-227

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

SIC 1200V 80M MOSFET SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX080B120S1-E1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1.2 kV
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1336 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	142 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-227
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)
SemiQ GCMX080B120S1-E1	100 mOhm	SOT-227-4 miniBLOC	Chassis Mount	4 V	1336 pF	25 V	-10 V	30 A	1.2 kV	N-Channel	175 °C	-55 °C	58 nC	SOT-227	142 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227

Technical documentation and resources