Specification	FDMS8888

Current - Continuous Drain (Id) @ 25°C	13.5 A, 21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1585 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	9.5 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

FDMS8880 Series

N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	FET Type	Power Dissipation (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDMS8848NZ	3 V	8075 pF	22.8 A 49 A	152 nC	-55 °C	150 °C	8-PowerTDFN	MOSFET (Metal Oxide)	3.1 mOhm	20 V	Surface Mount	N-Channel	2.5 W	104 W	4.5 V 10 V	8-PQFN (5x6)	40 V
ON Semiconductor FDMS8848NZ	3 V	8075 pF	22.8 A 49 A	152 nC	-55 °C	150 °C	8-PowerTDFN	MOSFET (Metal Oxide)	3.1 mOhm	20 V	Surface Mount	N-Channel	2.5 W	104 W	4.5 V 10 V	8-PQFN (5x6)	40 V
ON Semiconductor FDMS8888	2.5 V	1585 pF	13.5 A 21 A		-55 °C	150 °C	8-PowerTDFN	MOSFET (Metal Oxide)	9.5 mOhm	20 V	Surface Mount	N-Channel			4.5 V 10 V	8-PQFN (5x6)	30 V	2.5 W 42 W
ON Semiconductor FDMS8880	2.5 V	1585 pF	13.5 A 21 A		-55 °C	150 °C	8-PowerTDFN	MOSFET (Metal Oxide)		20 V	Surface Mount	N-Channel			4.5 V 10 V	8-PQFN (5x6)	30 V	2.5 W 42 W	8.5 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDMS8880 Series

The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.