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TEXTISCSD86336Q3DT
Discrete Semiconductor Products

FDMS8848NZ

Obsolete
ON Semiconductor

MOSFET N-CH 40V 22.8A/49A 8PQFN

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TEXTISCSD86336Q3DT
Discrete Semiconductor Products

FDMS8848NZ

Obsolete
ON Semiconductor

MOSFET N-CH 40V 22.8A/49A 8PQFN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS8848NZ
Current - Continuous Drain (Id) @ 25°C49 A, 22.8 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs152 nC
Input Capacitance (Ciss) (Max) @ Vds8075 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs3.1 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 243$ 1.24
243$ 1.24

Description

General part information

FDMS8880 Series

The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance.

Documents

Technical documentation and resources