STW75N60M6-4
ActiveN-CHANNEL 600 V, 32 MOHM TYP., 72 A MDMESH M6 POWER MOSFET IN A TO247-4 PACKAGE
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STW75N60M6-4
ActiveN-CHANNEL 600 V, 32 MOHM TYP., 72 A MDMESH M6 POWER MOSFET IN A TO247-4 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW75N60M6-4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 72 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 106 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 446 W |
| Rds On (Max) @ Id, Vgs | 36 mOhm |
| Supplier Device Package | TO-247-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
STW75 Series
N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package
| Part | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 72 A | 150 °C | -55 °C | 446 W | 25 V | MOSFET (Metal Oxide) | 4.75 V | 36 mOhm | TO-247-4 | 4850 pF | 10 V | N-Channel | 600 V | Through Hole | 106 nC | TO-247-4 |
 STMicroelectronics | 72 A | 150 °C | -55 °C | 446 W | 25 V | MOSFET (Metal Oxide) | 4.75 V | 36 mOhm | TO-247-3 | 4850 pF | 10 V | N-Channel | 600 V | Through Hole | 106 nC | TO-247-3 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW75 Series
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources