Discrete Semiconductor Products

SIE832DF-T1-E3

Obsolete

MOSFET N-CH 40V 50A 10POLARPAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 50A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE832DF-T1-E3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	77 nC
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PolarPAK® (S)
Power Dissipation (Max)	104 W, 5.2 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	10-PolarPAK® (S)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIE832DF-T1-E3	20 V	-55 °C	150 °C	40 V	4.5 V 10 V	50 A	5.5 mOhm	N-Channel	77 nC	10-PolarPAK® (S)	5.2 W 104 W	MOSFET (Metal Oxide)	3 V	10-PolarPAK® (S)	Surface Mount	3800 pF
Vishay General Semiconductor - Diodes Division SIE832DF-T1-GE3	20 V	-55 °C	150 °C	40 V	4.5 V 10 V	50 A	5.5 mOhm	N-Channel	77 nC	10-PolarPAK® (S)	5.2 W 104 W	MOSFET (Metal Oxide)	3 V	10-PolarPAK® (S)	Surface Mount	3800 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

Technical documentation and resources