SIE832 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 50A 10POLARPAK
| Part | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Power Dissipation (Max) | Technology | Vgs(th) (Max) @ Id | Package / Case | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 20 V | -55 °C | 150 °C | 40 V | 4.5 V 10 V | 50 A | 5.5 mOhm | N-Channel | 77 nC | 10-PolarPAK® (S) | 5.2 W 104 W | MOSFET (Metal Oxide) | 3 V | 10-PolarPAK® (S) | Surface Mount | 3800 pF |
Vishay General Semiconductor - Diodes Division | 20 V | -55 °C | 150 °C | 40 V | 4.5 V 10 V | 50 A | 5.5 mOhm | N-Channel | 77 nC | 10-PolarPAK® (S) | 5.2 W 104 W | MOSFET (Metal Oxide) | 3 V | 10-PolarPAK® (S) | Surface Mount | 3800 pF |