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Discrete Semiconductor Products

CSD16301Q2

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Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 29 MOHM

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WSON (DQK)
Discrete Semiconductor Products

CSD16301Q2

Active
Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 2 MM X 2 MM, 29 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD16301Q2
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]3 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.8 nC
Input Capacitance (Ciss) (Max) @ Vds340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-SMD, Flat Leads
Power Dissipation (Max)2.3 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package6-SON
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs (Max) [Min]-8 V
Vgs(th) (Max) @ Id1.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.76
10$ 0.47
100$ 0.30
500$ 0.23
1000$ 0.21
Digi-Reel® 1$ 0.76
10$ 0.47
100$ 0.30
500$ 0.23
1000$ 0.21
Tape & Reel (TR) 3000$ 0.18
6000$ 0.16
9000$ 0.16
15000$ 0.15
21000$ 0.14
30000$ 0.14
Texas InstrumentsLARGE T&R 1$ 0.31
100$ 0.21
250$ 0.16
1000$ 0.11

Description

General part information

CSD16301Q2 Series

This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package.

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