CSD16301Q2 Series

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Part	Vgs (Max) [Max]	Vgs (Max) [Min]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD16301Q2	10 V	-8 V	MOSFET (Metal Oxide)	340 pF	6-SON	8 V	3 V	24 mOhm	1.55 V	25 V	Surface Mount	N-Channel	2.8 nC	5 A	6-SMD Flat Leads	2.3 W	-55 °C	150 °C

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Key Features

• Ultra-low Qg and QgdLow thermal resistanceLead-free terminal platingRoHS compliantHalogen freeSON 2mm × 2mm plastic packageUltra-low Qg and QgdLow thermal resistanceLead-free terminal platingRoHS compliantHalogen freeSON 2mm × 2mm plastic package

Description

This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package. . . This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package. . .