Discrete Semiconductor Products
STP110N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 5.1 MOHM TYP., 110 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP110N10F7
ActiveSTMicroelectronics
N-CHANNEL 100 V, 5.1 MOHM TYP., 110 A STRIPFET F7 POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP110N10F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 110 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 7 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP110N10F7 Series
These devices utilize the 7thgeneration of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
Documents
Technical documentation and resources
