Discrete Semiconductor Products

SI4539ADY-T1-E3

Obsolete

MOSFET N/P-CH 30V 4.4A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V 4.4A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4539ADY-T1-E3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	3.7 A, 4.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs [Max]	36 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	FET Feature	Power - Max [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4539ADY-T1-E3	Logic Level Gate	1.1 W	8-SOIC	36 mOhm	N and P-Channel	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	3.7 A 4.4 A	1 V	Surface Mount	30 V	-55 °C	150 °C	20 nC
Vishay General Semiconductor - Diodes Division SI4539ADY-T1-GE3	Logic Level Gate	1.1 W	8-SOIC	36 mOhm	N and P-Channel	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	3.7 A 4.4 A	1 V	Surface Mount	30 V	-55 °C	150 °C	20 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 4.4A, 3.7A 1.1W Surface Mount 8-SOIC

Technical documentation and resources

No documents available