SI4539 Series

Catalog

MOSFET N/P-CH 30V 4.4A 8SOIC

Part	FET Feature	Power - Max [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Configuration	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI4539ADY-T1-E3	Logic Level Gate	1.1 W	8-SOIC	36 mOhm	N and P-Channel	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	3.7 A 4.4 A	1 V	Surface Mount	30 V	-55 °C	150 °C	20 nC
Vishay General Semiconductor - Diodes Division SI4539ADY-T1-GE3	Logic Level Gate	1.1 W	8-SOIC	36 mOhm	N and P-Channel	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	3.7 A 4.4 A	1 V	Surface Mount	30 V	-55 °C	150 °C	20 nC