FDS6690A-NBNP006

NRND

ON Semiconductor

SINGLE N-CHANNEL, LOGIC LEVEL, POWER TRENCH® MOSFET 30V, 11A, 12.5MΩ

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DocumentsPackage Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS6690A-NBNP006

NRND

ON Semiconductor

SINGLE N-CHANNEL, LOGIC LEVEL, POWER TRENCH® MOSFET 30V, 11A, 12.5MΩ

Deep-Dive with AI

DocumentsPackage Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6690A-NBNP006

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1205 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	12.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS6690A Series

Single N-Channel, Logic Level, Power Trench® MOSFET 30V, 11A, 12.5mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FDS6690A	1205 pF	Surface Mount	-55 °C	150 °C	11 A	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	3 V	N-Channel	20 V	2.5 W	30 V	12.5 mOhm
ON Semiconductor FDS6690A-NBNP006	1205 pF	Surface Mount	-55 °C	150 °C	11 A	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	3 V	N-Channel	20 V	1 W	30 V	12.5 mOhm
ON Semiconductor FDS6690AS	910 pF	Surface Mount	-55 °C	150 °C	10 A	8-SOIC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	3 V	N-Channel	20 V	2.5 W	30 V	12 mOhm	23 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.23

Description

General part information

FDS6690A Series

This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Documents

Technical documentation and resources

Package Drawing-751EB-SOIC8

Package Drawing