Discrete Semiconductor Products
FDMS003N08C
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 80 V, 147 A, 3.1 MΩ
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Discrete Semiconductor Products
FDMS003N08C
ActiveON Semiconductor
N-CHANNEL SHIELDED GATE POWERTRENCH<SUP>®</SUP> MOSFET 80 V, 147 A, 3.1 MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMS003N08C |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A, 147 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [x] | 73 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5350 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.7 W, 125 W |
| Rds On (Max) @ Id, Vgs | 3.1 mOhm |
| Supplier Device Package | Power56 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 7.86 | |
| 10 | $ 5.35 | |||
| 100 | $ 3.93 | |||
| 500 | $ 3.46 | |||
| Digi-Reel® | 1 | $ 7.86 | ||
| 10 | $ 5.35 | |||
| 100 | $ 3.93 | |||
| 500 | $ 3.46 | |||
| Tape & Reel (TR) | 3000 | $ 3.46 | ||
| Newark | Each | 500 | $ 3.77 | |
| ON Semiconductor | N/A | 1 | $ 3.18 | |
Description
General part information
FDMS003N08C Series
This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Documents
Technical documentation and resources