Discrete Semiconductor Products

MJW18020G

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ON Semiconductor

HIGH VOLTAGE, PLANAR NPN BIPOLAR POWER TRANSISTOR

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Search across all available documentation for this part.

DocumentsPackage Drawing-340L-02-TO-247 Datasheet +1

Discrete Semiconductor Products

MJW18020G

Active

ON Semiconductor

HIGH VOLTAGE, PLANAR NPN BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

DocumentsPackage Drawing-340L-02-TO-247 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJW18020G

Current - Collector (Ic) (Max) [Max]	30 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	14 hFE
Frequency - Transition	13 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Supplier Device Package	TO-247-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	450 V

MJW18020 Series

High Voltage, Planar NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)	Package / Case
ON Semiconductor MJW18020G	100 µA	30 A	TO-247-3	13 MHz	14 hFE	250 W	1.5 V	NPN	Through Hole	150 °C	-65 °C	450 V	TO-247-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.29
		10	$ 5.65
		100	$ 4.15
		500	$ 3.56
Newark	Each	1	$ 10.27
		10	$ 10.09
		25	$ 8.53
		60	$ 6.96
		120	$ 6.67
		270	$ 6.37
ON Semiconductor	N/A	1	$ 3.80

Description

General part information

MJW18020 Series

The MJW18020 planar High Voltage Power Transistor is specifically designed for motor control applications, high power supplies and UPS¿s for which the high reproducibility of DC and switching parameters minimizes the dead time in bridge configurations.