MJW18020 Series

High Voltage, Planar NPN Bipolar Power Transistor

Catalog

High Voltage, Planar NPN Bipolar Power Transistor

Part	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max)	Package / Case
ON Semiconductor MJW18020G	100 µA	30 A	TO-247-3	13 MHz	14 hFE	250 W	1.5 V	NPN	Through Hole	150 °C	-65 °C	450 V	TO-247-3

Catalog

High Voltage, Planar NPN Bipolar Power Transistor

Key Features

• High and Excellent Gain Linearity

• Fast and Very Tight Switching Times Parameters tsiand tfi

• Very Stable Leakage Current due to the Planar Structure

• High Reliability

• Pb-Free Package is Available

Description

The MJW18020 planar High Voltage Power Transistor is specifically designed for motor control applications, high power supplies and UPS¿s for which the high reproducibility of DC and switching parameters minimizes the dead time in bridge configurations.