Zenode.ai Logo
Beta
ROHM Semiconductor-RGW60TS65DHRC11 IGBT Chip Trans IGBT Chip N-CH 650V 64A 178W 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
Discrete Semiconductor Products

RGW60TS65DHRC11

Active
Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

Deep-Dive with AI

Search across all available documentation for this part.

ROHM Semiconductor-RGW60TS65DHRC11 IGBT Chip Trans IGBT Chip N-CH 650V 64A 178W 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
Discrete Semiconductor Products

RGW60TS65DHRC11

Active
Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE

Technical Specifications

Parameters and characteristics for this part

SpecificationRGW60TS65DHRC11
Current - Collector (Ic) (Max) [Max]64 A
Current - Collector Pulsed (Icm)120 A
Gate Charge84 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseTO-247-3
Power - Max [Max]178 W
Reverse Recovery Time (trr)87 ns
Supplier Device PackageTO-247N
Td (on/off) @ 25°C107 ns
Td (on/off) @ 25°C36 ns
Test Condition400 V, 15 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic1.9 V
Voltage - Collector Emitter Breakdown (Max)650 V

RGW60TS65EHR Series

High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

PartCurrent - Collector (Ic) (Max) [Max]Supplier Device PackageVce(on) (Max) @ Vge, IcPower - Max [Max]Test ConditionMounting TypePackage / CaseOperating Temperature [Min]Operating Temperature [Max]IGBT TypeReverse Recovery Time (trr)Td (on/off) @ 25°CTd (on/off) @ 25°CCurrent - Collector Pulsed (Icm)Gate ChargeVoltage - Collector Emitter Breakdown (Max)Switching EnergyTd (on/off) @ 25°C
ROHM Semiconductor-RGW60TS65DHRC11 IGBT Chip Trans IGBT Chip N-CH 650V 64A 178W 3-Pin(3+Tab) TO-247N Tube Automotive AEC-Q101
Rohm Semiconductor
64 A
TO-247N
1.9 V
178 W
10 Ohm
15 A
15 V
400 V
Through Hole
TO-247-3
-40 C
175 °C
Trench Field Stop
87 ns
107 ns
36 ns
120 A
84 nC
650 V
Product dimension image
Rohm Semiconductor
64 A
TO-247N
1.9 V
178 W
10 Ohm
15 A
15 V
400 V
Through Hole
TO-247-3
-40 C
175 °C
Trench Field Stop
101 ns
37 ns
120 A
84 nC
650 V
TO-247N
Rohm Semiconductor
64 A
TO-247N
1.9 V
178 W
10 Ohm
15 A
15 V
400 V
Through Hole
TO-247-3
-40 C
175 °C
Trench Field Stop
107 ns
36 ns
120 A
84 nC
650 V
Product dimension image
Rohm Semiconductor
64 A
TO-247N
1.9 V
178 W
10 Ohm
15 A
15 V
400 V
Through Hole
TO-247-3
-40 C
175 °C
34 ns
37 ns
91 ns
120 A
84 nC
650 V
70 µJ
220 µJ
TO-247-3
Rohm Semiconductor
60 A
TO-247N
1.9 V
178 W
10 Ohm
15 V
30 A
400 V
Through Hole
TO-247-3
-40 C
175 °C
Trench Field Stop
120 A
84 nC
650 V
480 µJ
490 µJ
37 ns
114 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 7.92
10$ 5.38
450$ 3.36
900$ 3.35
NewarkEach 1$ 8.07
10$ 5.56
25$ 5.55
50$ 5.44
100$ 5.31
250$ 4.71
900$ 4.10

Description

General part information

RGW60TS65EHR Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

Compliance of the ELV directive

Environmental Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Types and Features of Transistors

Application Note

About Flammability of Materials

Environmental Data

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Anti-Whisker formation

Package Information

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Notes for Temperature Measurement Using Thermocouples

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Moisture Sensitivity Level

Package Information

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

Judgment Criteria of Thermal Evaluation

Thermal Design

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

White Paper

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

How to Create Symbols for PSpice Models

Models

What Is Thermal Design

Thermal Design

Simulation Guide for PTC Heater Thermal Simulation (ROHM Solution Simulator)

Simulations

Two-Resistor Model for Thermal Simulation

Thermal Design

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

About Export Administration Regulations (EAR)

Export Information

Package Dimensions

Package Information

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article