
RGW60TS65DHRC11
ActiveHIGH-SPEED FAST SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE
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RGW60TS65DHRC11
ActiveHIGH-SPEED FAST SWITCHING TYPE, 650V 30A, FRD BUILT-IN, TO-247N, FIELD STOP TRENCH IGBT FOR AUTOMOTIVE
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Technical Specifications
Parameters and characteristics for this part
| Specification | RGW60TS65DHRC11 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 64 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Gate Charge | 84 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 178 W |
| Reverse Recovery Time (trr) | 87 ns |
| Supplier Device Package | TO-247N |
| Td (on/off) @ 25°C | 107 ns |
| Td (on/off) @ 25°C | 36 ns |
| Test Condition | 400 V, 15 A, 10 Ohm, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.9 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
RGW60TS65EHR Series
High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive
| Part | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Vce(on) (Max) @ Vge, Ic | Power - Max [Max] | Test Condition | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | IGBT Type | Reverse Recovery Time (trr) | Td (on/off) @ 25°C | Td (on/off) @ 25°C | Current - Collector Pulsed (Icm) | Gate Charge | Voltage - Collector Emitter Breakdown (Max) | Switching Energy | Td (on/off) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 64 A | TO-247N | 1.9 V | 178 W | 10 Ohm 15 A 15 V 400 V | Through Hole | TO-247-3 | -40 C | 175 °C | Trench Field Stop | 87 ns | 107 ns | 36 ns | 120 A | 84 nC | 650 V | ||
Rohm Semiconductor | 64 A | TO-247N | 1.9 V | 178 W | 10 Ohm 15 A 15 V 400 V | Through Hole | TO-247-3 | -40 C | 175 °C | Trench Field Stop | 101 ns | 37 ns | 120 A | 84 nC | 650 V | |||
Rohm Semiconductor | 64 A | TO-247N | 1.9 V | 178 W | 10 Ohm 15 A 15 V 400 V | Through Hole | TO-247-3 | -40 C | 175 °C | Trench Field Stop | 107 ns | 36 ns | 120 A | 84 nC | 650 V | |||
Rohm Semiconductor | 64 A | TO-247N | 1.9 V | 178 W | 10 Ohm 15 A 15 V 400 V | Through Hole | TO-247-3 | -40 C | 175 °C | 34 ns | 37 ns 91 ns | 120 A | 84 nC | 650 V | 70 µJ 220 µJ | |||
Rohm Semiconductor | 60 A | TO-247N | 1.9 V | 178 W | 10 Ohm 15 V 30 A 400 V | Through Hole | TO-247-3 | -40 C | 175 °C | Trench Field Stop | 120 A | 84 nC | 650 V | 480 µJ 490 µJ | 37 ns 114 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGW60TS65EHR Series
The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.
Documents
Technical documentation and resources