Discrete Semiconductor Products

RGW60TS65GC11

NRND

Rohm Semiconductor

IGBT TRENCH FS 650V 60A TO-247N

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Discrete Semiconductor Products

RGW60TS65GC11

NRND

Rohm Semiconductor

IGBT TRENCH FS 650V 60A TO-247N

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGW60TS65GC11

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	84 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	178 W
Supplier Device Package	TO-247N
Switching Energy	490 µJ, 480 µJ
Td (on/off) @ 25°C	114 ns, 37 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RGW60TS65EHR Series

High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Vce(on) (Max) @ Vge, Ic	Power - Max [Max]	Test Condition	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	IGBT Type	Reverse Recovery Time (trr)	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Gate Charge	Voltage - Collector Emitter Breakdown (Max)	Switching Energy	Td (on/off) @ 25°C
Rohm Semiconductor RGW60TS65DHRC11	64 A	TO-247N	1.9 V	178 W	10 Ohm 15 A 15 V 400 V	Through Hole	TO-247-3	-40 C	175 °C	Trench Field Stop	87 ns	107 ns	36 ns	120 A	84 nC	650 V
Rohm Semiconductor RGW60TS65EHRC11	64 A	TO-247N	1.9 V	178 W	10 Ohm 15 A 15 V 400 V	Through Hole	TO-247-3	-40 C	175 °C	Trench Field Stop		101 ns	37 ns	120 A	84 nC	650 V
Rohm Semiconductor RGW60TS65HRC11	64 A	TO-247N	1.9 V	178 W	10 Ohm 15 A 15 V 400 V	Through Hole	TO-247-3	-40 C	175 °C	Trench Field Stop		107 ns	36 ns	120 A	84 nC	650 V
Rohm Semiconductor RGW60TS65CHRC11	64 A	TO-247N	1.9 V	178 W	10 Ohm 15 A 15 V 400 V	Through Hole	TO-247-3	-40 C	175 °C		34 ns		37 ns 91 ns	120 A	84 nC	650 V	70 µJ 220 µJ
Rohm Semiconductor RGW60TS65GC11	60 A	TO-247N	1.9 V	178 W	10 Ohm 15 V 30 A 400 V	Through Hole	TO-247-3	-40 C	175 °C	Trench Field Stop				120 A	84 nC	650 V	480 µJ 490 µJ	37 ns 114 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.86
		30	$ 3.32
		120	$ 2.76
		510	$ 2.35
		1020	$ 2.27

Description

General part information

RGW60TS65EHR Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Documents

Technical documentation and resources

No documents available