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TO-263
Discrete Semiconductor Products

FDB16AN08A0

Active
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,9A I(D),TO-263AB ROHS COMPLIANT: YES

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TO-263
Discrete Semiconductor Products

FDB16AN08A0

Active
ON Semiconductor

TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,9A I(D),TO-263AB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB16AN08A0
Current - Continuous Drain (Id) @ 25°C58 A, 9 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)6 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds1857 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)135 W
Rds On (Max) @ Id, Vgs16 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.53
10$ 2.31
100$ 1.61
Digi-Reel® 1$ 3.53
10$ 2.31
100$ 1.61
Tape & Reel (TR) 800$ 1.25
1600$ 1.18
NewarkEach (Supplied on Full Reel) 1$ 1.59
3000$ 1.50
6000$ 1.42
12000$ 1.28
18000$ 1.23
30000$ 1.19
ON SemiconductorN/A 1$ 1.26

Description

General part information

FDB16AN08A0 Series

N-Channel PowerTrench®MOSFET, 75 V, 58 A, 16 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.