FDB16AN08A0 Series

N-Channel PowerTrench® MOSFET, 75 V, 58 A, 16 mΩ

Catalog

N-Channel PowerTrench® MOSFET, 75 V, 58 A, 16 mΩ

Part	FET Type	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDB16AN08A0	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	6 V 10 V	20 V	75 V	135 W	16 mOhm	Surface Mount	MOSFET (Metal Oxide)	4 V	-55 °C	175 ░C	9 A 58 A	42 nC	1857 pF

Catalog

N-Channel PowerTrench® MOSFET, 75 V, 58 A, 16 mΩ

Key Features

• RDS(on)= 13 mΩ (Typ.) @ VGS= 10 V, ID= 58 A

• QG(tot)= 28 nC (Typ.) @ VGS= 10 V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

Description

N-Channel PowerTrench®MOSFET, 75 V, 58 A, 16 mΩ, The latest shielded gate PowerTrench®MOSFET, which combines a smaller QSYNCand soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.