Discrete Semiconductor Products

PBRP123ET-QR

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TRANS PREBIAS PNP 40V TO236AB

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Discrete Semiconductor Products

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TRANS PREBIAS PNP 40V TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PBRP123ET-QR

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	TO-236AB
Transistor Type	PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Transistor Type	Mounting Type	Grade	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]	Supplier Device Package	Resistor - Emitter Base (R2)	Qualification	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]
Freescale Semiconductor - NXP PBRP123ET-QR	PNP - Pre-Biased	Surface Mount	Automotive	500 nA	2.2 kOhm	40 V	SC-59 SOT-23-3 TO-236-3	250 mW	TO-236AB	2.2 kOhms	AEC-Q101	180	600 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB

Technical documentation and resources