
Discrete Semiconductor Products
PBRP123ET-QR
ActiveNexperia USA Inc.
40 V, 600 MA PNP PB RET; R1 = 2.2 KΩ, R2 = 2.2 KΩ
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Search across all available documentation for this part.

Discrete Semiconductor Products
PBRP123ET-QR
ActiveNexperia USA Inc.
40 V, 600 MA PNP PB RET; R1 = 2.2 KΩ, R2 = 2.2 KΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PBRP123ET-QR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 180 |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 250 mW |
| Qualification | AEC-Q101 |
| Resistor - Base (R1) | 2.2 kOhm |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Supplier Device Package | TO-236AB |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.06 | |
| 6000 | $ 0.06 | |||
| 9000 | $ 0.05 | |||
| 30000 | $ 0.05 | |||
| 75000 | $ 0.04 | |||
| 150000 | $ 0.04 | |||
Description
General part information
PBRP123 Series
PNP low VCEsatPerformance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources