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2N1893
Discrete Semiconductor Products

JANTX2N1613L

Active
Microchip Technology

NPN SILICON LOW-POWER 30V, 0.5A

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Search across all available documentation for this part.

2N1893
Discrete Semiconductor Products

JANTX2N1613L

Active
Microchip Technology

NPN SILICON LOW-POWER 30V, 0.5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N1613L
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Power - Max [Max]800 mW
QualificationMIL-PRF-19500/181
Supplier Device PackageTO-5AA
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 113.57
Microchip DirectN/A 1$ 122.30

Description

General part information

JANTX2N1613L-Transistor Series

This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181.

Documents

Technical documentation and resources