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Discrete Semiconductor Products

FGA30N120FTDTU

Obsolete
ON Semiconductor

IGBT, 1200V, 30A, FIELD STOP TRENCH

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Discrete Semiconductor Products

FGA30N120FTDTU

Obsolete
ON Semiconductor

IGBT, 1200V, 30A, FIELD STOP TRENCH

Technical Specifications

Parameters and characteristics for this part

SpecificationFGA30N120FTDTU
Current - Collector (Ic) (Max) [Max]60 A
Current - Collector Pulsed (Icm)90 A
Gate Charge208 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-65-3, TO-3P-3
Power - Max [Max]339 W
Reverse Recovery Time (trr)730 ns
Supplier Device PackageTO-3PN
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

FGA30N120FTD Series

Using advanced field stop trench technology, ON Semiconductor’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.