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Discrete Semiconductor Products
FGA30N120FTDTU
ObsoleteON Semiconductor
IGBT, 1200V, 30A, FIELD STOP TRENCH
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Discrete Semiconductor Products
FGA30N120FTDTU
ObsoleteON Semiconductor
IGBT, 1200V, 30A, FIELD STOP TRENCH
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FGA30N120FTDTU |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 60 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 208 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 339 W |
| Reverse Recovery Time (trr) | 730 ns |
| Supplier Device Package | TO-3PN |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FGA30N120FTD Series
Using advanced field stop trench technology, ON Semiconductor’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.
Documents
Technical documentation and resources