FGA30N120FTD Series

IGBT, 1200V, 30A, Field Stop Trench

Catalog

IGBT, 1200V, 30A, Field Stop Trench

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Gate Charge	Reverse Recovery Time (trr)	IGBT Type	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]
ON Semiconductor FGA30N120FTDTU	TO-3PN	60 A	208 nC	730 ns	Trench Field Stop	90 A	1200 V	SC-65-3 TO-3P-3	2 V	Through Hole	-55 °C	150 °C	339 W

Catalog

IGBT, 1200V, 30A, Field Stop Trench

Key Features

• Field stop trench technology

• High speed switching

• Low saturation voltage: VCE(sat)= 1.6V @ IC= 30A

• High input impedance

Description

Using advanced field stop trench technology, ON Semiconductor’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.