Specification	NP20P06SLG-E1-AY

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	1650 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	38 W, 1.2 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	MP-3ZK
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NP20P06 Series

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Supplier Device Package
Renesas Electronics Corporation NP20P06YLG-E1-AY	8-HSON (5x5.4)	4.5 V 10 V	51 nC	MOSFET (Metal Oxide)	47 mOhm	60 V	20 A	P-Channel	1 W 57 W	Surface Mount	2407 pF	2.5 V	20 V	8-PowerLDFN	175 °C
Renesas Electronics Corporation NP20P06SLG-E1-AY	TO-252	4.5 V 10 V		MOSFET (Metal Oxide)	48 mOhm	60 V	20 A	P-Channel		Surface Mount	1650 pF	2.5 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	34 nC	1.2 W 38 W	MP-3ZK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Super low on-state resistanceRDS(on)1 = 48 mO MAX. (VGS = -10 V, ID = -10 A)RDS(on)2 = 64 mO MAX. (VGS = -4.5 V, ID = -10 A)

RDS(on)1 = 48 mO MAX. (VGS = -10 V, ID = -10 A)

RDS(on)2 = 64 mO MAX. (VGS = -4.5 V, ID = -10 A)

Technical documentation and resources