Discrete Semiconductor Products

NP20P06YLG-E1-AY

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MOSFET P-CH 60V 20A 8HSON

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Discrete Semiconductor Products

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MOSFET P-CH 60V 20A 8HSON

Technical Specifications

Parameters and characteristics for this part

Specification	NP20P06YLG-E1-AY

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	2407 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerLDFN
Power Dissipation (Max)	57 W, 1 W
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	8-HSON (5x5.4)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Supplier Device Package
Renesas Electronics Corporation NP20P06YLG-E1-AY	8-HSON (5x5.4)	4.5 V 10 V	51 nC	MOSFET (Metal Oxide)	47 mOhm	60 V	20 A	P-Channel	1 W 57 W	Surface Mount	2407 pF	2.5 V	20 V	8-PowerLDFN	175 °C
Renesas Electronics Corporation NP20P06SLG-E1-AY	TO-252	4.5 V 10 V		MOSFET (Metal Oxide)	48 mOhm	60 V	20 A	P-Channel		Surface Mount	1650 pF	2.5 V	20 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	34 nC	1.2 W 38 W	MP-3ZK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 20A (Tc) 1W (Ta), 57W (Tc) Surface Mount 8-HSON (5x5.4)

Technical documentation and resources