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TO-236AB
Discrete Semiconductor Products

PMV450ENEAR

Active
Freescale Semiconductor - NXP

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 60V 0.8A 3-PIN SOT-23 T/R

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TO-236AB
Discrete Semiconductor Products

PMV450ENEAR

Active
Freescale Semiconductor - NXP

SMALL SIGNAL LOW RDSON AUTOMOTIVE TRANS MOSFET N-CH 60V 0.8A 3-PIN SOT-23 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV450ENEAR
Current - Continuous Drain (Id) @ 25°C800 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]3.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds101 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)554 mW, 323 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs380 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.33
10$ 0.23
100$ 0.11
500$ 0.09
1000$ 0.06
Digi-Reel® 1$ 0.33
10$ 0.23
100$ 0.11
500$ 0.09
1000$ 0.06
Tape & Reel (TR) 3000$ 0.06
6000$ 0.05
9000$ 0.04
30000$ 0.04
75000$ 0.04
150000$ 0.03

Description

General part information

PMV450ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.